Manufacturer Part Number
HSMS-2800-TR1G
Manufacturer
Broadcom
Introduction
RF Schottky Diode for high-frequency and low-power applications
Product Features and Performance
Schottky Barrier diode with unidirectional conductivity
Voltage - Peak Reverse (Max) at 70V
Current - Max at 1A
Low Capacitance of 2pF at 0V, 1MHz
Low Resistance of 35Ohm at 5mA, 1MHz
High Operating Temperature up to 150°C (TJ)
Product Advantages
Ideal for high-frequency applications
Designed for efficient use in rectification, mixing, detecting and sampling applications
Compact SOT-23-3 package for easy PCB mounting
Key Technical Parameters
Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 70V
Current - Max: 1 A
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Resistance @ If, F: 35Ohm @ 5mA, 1MHz
Operating Temperature: 150°C (TJ)
Quality and Safety Features
Quality performance assured for high-temperature operation
Compatibility
Packaged in industry-standard TO-236-3, SC-59, SOT-23-3
Application Areas
RF applications, high-frequency rectification, and signal detection
Product Lifecycle
Product Status: Obsolete
Replacements or upgrades may be available
Several Key Reasons to Choose This Product
High reverse voltage capacity suitable for a variety of applications
Low forward voltage drop and capacitance for more efficient operation
Can handle higher temperatures, ensuring reliability in challenging environments
Compact package design for space-sensitive designs
Trusted manufacturer with a reputation for quality semiconductor products