Manufacturer Part Number
ATF-55143-TR1G
Manufacturer
Avago Technologies (Broadcom)
Introduction
High-performance E-pHEMT transistor with excellent gain and noise figure characteristics for use in RF power amplifier circuits.
Product Features and Performance
4dBm output power
7dB gain
6dB noise figure
Operates at 2GHz frequency
Rated for 5V, 100mA operation
Product Advantages
Suitable for use in high-frequency RF power amplifier applications
Delivers excellent gain and noise performance
Compact SOT-343 package
Key Technical Parameters
Technology: E-pHEMT
Package: SOT-343, Tape & Reel
Power Output: 14.4dBm
Current (Test): 10mA
Voltage (Rated): 5V
Gain: 17.7dB
Voltage (Test): 2.7V
Current Rating: 100mA
Frequency: 2GHz
Noise Figure: 0.6dB
Quality and Safety Features
Manufactured by Avago Technologies, a leading semiconductor company
Reliable performance and quality assurance
Compatibility
Suitable for use in various RF power amplifier circuits and applications
Application Areas
Wireless communications
RF power amplifiers
Transmitter circuits
Product Lifecycle
Current production model, no discontinuation planned
Replacement or upgrade options available from Avago/Broadcom
Key Reasons to Choose This Product
Excellent RF performance characteristics (high gain, low noise figure)
Compact and easy-to-use SOT-343 package
Proven reliability and quality from Avago/Broadcom
Suitable for a wide range of RF power amplifier applications