Manufacturer Part Number
ATF-38143-TR1G
Manufacturer
Avago Technologies (Broadcom)
Introduction
High-performance, low-noise pHEMT field-effect transistor (FET) for RF and microwave applications.
Product Features and Performance
High gain of 16dB at 2GHz
Low noise figure of 0.4dB
High output power of 12dBm
Operates at 4.5V with a current of 10mA
Usable frequency range up to 2GHz
Product Advantages
Excellent RF performance for small-signal amplifier and switch applications
Compact, surface-mount packaging for easy integration
Reliable and stable operation
Key Technical Parameters
Technology: pHEMT FET
Power Output: 12dBm
Current (Test): 10mA
Voltage (Rated): 4.5V
Gain: 16dB
Voltage (Test): 2V
Current Rating: 145mA
Frequency: 2GHz
Noise Figure: 0.4dB
Quality and Safety Features
Reliable and stable performance
Compliant with relevant safety standards
Compatibility
Compatible with various RF and microwave circuit designs
Application Areas
Small-signal amplifiers
Switches
RF front-end circuitry
Wireless communication systems
Product Lifecycle
Current product offering
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent RF performance with high gain, low noise, and high output power
Compact and easy-to-integrate package
Reliable and stable operation
Suitable for a wide range of RF and microwave applications