Manufacturer Part Number
MAX8791GTA+T
Manufacturer
Analog Devices
Introduction
The MAX8791GTA+T is a sophisticated gate driver designed for power management applications, especially focusing on driving N-Channel MOSFETs in synchronous half-bridge configurations.
Product Features and Performance
Supports half-bridge driven configuration for efficient power management
Synchronous channel type enhances efficiency and power conservation
Capable of driving 2 N-Channel MOSFET gates
Operates on a supply voltage range of 4.2V to 5.5V
Impressive peak output current capabilities of 2.2A (source) and 2.7A (sink)
Non-inverting input type simplifies signal chaining and operation
Quick rise and fall times of 10ns and 8ns, respectively, for fast switching
Robust operating temperature range of -40°C to 150°C (TJ)
Product Advantages
Enhanced efficiency and power-saving due to synchronous operation
High current output capabilities provide robust drive strength
Fast switching speeds enable efficient operation and reduced power losses
Wide operating temperature range ensures reliability across various conditions
Key Technical Parameters
Supply Voltage: 4.2V ~ 5.5V
Peak Output Current (Source, Sink): 2.2A, 2.7A
Rise / Fall Time (Typ): 10ns, 8ns
Operating Temperature Range: -40°C ~ 150°C (TJ)
Quality and Safety Features
Operates reliably under a wide range of temperature conditions, ensuring robust performance and safety in diverse environments
Compatibility
Specifically designed for driving N-Channel MOSFETs, ensuring compatibility with a wide range of power management applications
Application Areas
Power management systems
Efficient half-bridge configurations
High-frequency switching applications
Product Lifecycle
Obsolete status indicates that it is nearing discontinuation, suggesting potential for reduced availability and the need for finding replacements or upgrades
Several Key Reasons to Choose This Product
High efficiency and power conservation are critical in modern electronic applications, making this driver an excellent choice
Robust drive capabilities enhance the performance of N-Channel MOSFETs
Fast switching capabilities reduce power losses and improve efficiency in power management systems
Wide operating temperature range ensures reliability in challenging conditions
Although obsolete, its performance characteristics may still offer unmatched benefits for existing systems requiring maintenance or specific design needs