Manufacturer Part Number
MAX5075AAUA+T
Manufacturer
Analog Devices
Introduction
An integrated power management IC designed to drive N-Channel MOSFETs in synchronous low-side gate driving applications.
Product Features and Performance
Low-side MOSFET gate driving capability
Dual-channel synchronous operation
Peak output current of 3A for both source and sink
Short rise and fall times of 10ns
RC input circuit for smooth operation
High operating temperature range from -40°C to 150°C
Designed for surface mount technology
Product Advantages
High efficiency with synchronous driving
Durable performance under temperature extremes
Compact 8-TSSOP/8-MSOP footprint
Integrated features minimize external components
Key Technical Parameters
Driven Configuration: Low-Side
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V to 15V
Current - Peak Output: 3A (Source and Sink)
Rise / Fall Time: 10ns typical
Operating Temperature Range: -40°C to 150°C
Mounting: Surface Mount
Package: 8-TSSOP, 8-MSOP with Exposed Pad
Quality and Safety Features
Operational within a wide temperature range ensuring device reliability
Robust surface-mount package for secure assembly and thermal performance
Compatibility
Compatible with low-side N-Channel MOSFET gate driving
Can be integrated into various power management systems due to its voltage supply range
Application Areas
Switch Mode Power Supplies (SMPS)
DC-DC Converters
Motor Control Circuits
Power Management Modules
Product Lifecycle
Active product status
Not indicated as nearing discontinuation
Availability of replacements or upgrades not explicitly stated
Several Key Reasons to Choose This Product
High current driving capability enables handling of demanding applications
Fast switching reduces power loss, improving efficiency
Low input capacitance eases drive requirements
Stable operation in an extended temperature range ensures reliability in harsh environments
Small package size saves board space and facilitates compact designs
Analog Devices' reputation for quality and robustness in semiconductor design