MAX4420ESA+T - Analog Devices Inc./Maxim Integrated

Manufacturer Part Number

MAX4420ESA+T

Manufacturer

Analog Devices

Introduction

The MAX4420ESA+T is a high-speed, low-side gate driver designed for driving N-Channel and P-Channel MOSFETs, optimized for power management applications.

Product Features and Performance

Single-channel driver for N-Channel, P-Channel MOSFETs

Non-Inverting input type

Peak output current of 6A for both sourcing and sinking

Fast rise and fall times of 25ns typical

Wide supply voltage range from 4.5V to 18V

Low logic input thresholds (VIL at 0.8V and VIH at 2.4V)

Product Advantages

High peak output current capability enhances drive strength

Fast switching times improve efficiency in power conversion

Compatible with a broad range of supply voltages for versatile use

Robust operating temperature range ensures reliability in extreme conditions

Key Technical Parameters

Supply Voltage: 4.5V to 18V

Logic Voltage VIL, VIH: 0.8V, 2.4V

Current Peak Output (Source, Sink): 6A, 6A

Rise / Fall Time (Typ): 25ns

Operating Temperature: -40°C to 85°C

Quality and Safety Features

Built with robust thermal and electrical protections

Stable operation under a wide range of temperatures for enhanced durability

Compatibility

Suitable for driving both N-Channel and P-Channel MOSFETs

Compatible with a variety of power management applications

Application Areas

Switching power supplies

DC-DC converters

Motor drives

Power management circuits

Product Lifecycle

Product status is Active

No current indications of discontinuation, ensuring long-term availability

Several Key Reasons to Choose This Product

Exceptionally high sourcing and sinking current capability facilitates handling high power loads

Fast switching capabilities reduce power losses and improve efficiency

Wide input logic threshold levels ensure compatibility with various logic families

Reliable operation guaranteed from -40°C up to 85°C, suitable for industrial applications

Direct compatibility with a broad range of MOSFETs simplifies system design