MAX15013AASA+ - Analog Devices Inc./Maxim Integrated

Manufacturer Part Number

MAX15013AASA+

Manufacturer

Analog Devices

Introduction

Integrated high voltage half-bridge N-Channel MOSFET driver for power management applications.

Product Features and Performance

Supports half-bridge driver configuration

Two independent channels

Designed for N-Channel MOSFET gate driving

8V to 12.6V supply voltage range

Non-inverting input type

High side voltage up to 175V (Bootstrap)

Fast rise and fall times of 65ns each

Operational over a wide temperature range from -40°C to 150°C

Surface mount 8-SOIC packaging for compact integration

Product Advantages

Robust high-speed gate driving for efficient switching

Dual independent driver channels provide design flexibility

High bootstrap voltage capability suitable for high-side driving applications

Fast switching speeds contribute to enhanced power efficiency

Extended temperature range ensures reliability in harsh conditions

Compact surface mount package suitable for space-constrained applications

Key Technical Parameters

Driven Configuration: Half-Bridge

Channel Type: Independent

Number of Drivers: 2

Gate Type: N-Channel MOSFET

Voltage - Supply: 8V ~ 12.6V

Logic Voltage - VIL, VIH: 0.8V, 2V

Current - Peak Output (Source, Sink): 2A, 2A

High Side Voltage - Max (Bootstrap): 175V

Rise / Fall Time (Typ): 65ns

Operating Temperature: -40°C ~ 150°C

Quality and Safety Features

Operational temperature range ensures device stability under thermal stress

Built-in protection features to ensure device and system safety

Compatibility

Compatible with N-Channel MOSFETs

Suitable for a wide range of power supply voltages

Surface mount compatibility with 8-SOIC footprint

Application Areas

Switching power supplies

DC-DC converters

Motor controllers

Half-bridge power stages

Product Lifecycle

Product Status: Active

No indication of nearing discontinuation

Replacements or upgrades can be considered within Analog Devices' product range

Several Key Reasons to Choose This Product

Highly integrated solution for efficient power management

Dual channels enhance design versatility

High speed switching improves overall power efficiency

Capable of driving high side N-Channel MOSFETs up to 175V

Reliable operation in extreme temperatures

Compact form factor for space-sensitive applications