Manufacturer Part Number
BLF6G10LS-200RN
Manufacturer
Ampleon
Introduction
This is a high-performance LDMOS RF power transistor suitable for use in various RF power amplifier applications operating in the 700 MHz to 1 GHz frequency range.
Product Features and Performance
Designed for high power output up to 200W
Excellent gain of 20dB
Operates at a rated voltage of 65V
Suitable for use in the 700 MHz to 1 GHz frequency range
Capable of handling high current up to 4.2A
Product Advantages
Robust LDMOS technology for high reliability
Efficient power handling capabilities
Wide operating frequency range
Suitable for high-power RF amplifier designs
Key Technical Parameters
Output Power: 200W
Current (Test): 1.4A
Voltage (Rated): 65V
Gain: 20dB
Voltage (Test): 28V
Current Rating: 4.2A
Frequency Range: 700MHz to 1GHz
Quality and Safety Features
RoHS3 compliant
Packaged in SOT-502B surface mount package
Compatibility
Chassis mount package
Compatible with standard PCB mounting
Application Areas
RF power amplifiers
Broadcast transmitters
Wireless infrastructure equipment
Industrial, scientific, and medical (ISM) applications
Product Lifecycle
Currently in active production
Replacement or upgrade options available
Several Key Reasons to Choose This Product
Excellent power handling capabilities up to 200W
Wide operating frequency range from 700MHz to 1GHz
Robust LDMOS technology for high reliability
Efficient and cost-effective solution for high-power RF amplifier designs
Compatibility with standard PCB mounting
