BLF6G10LS-200RN - Ampleon USA Inc.

Manufacturer Part Number

BLF6G10LS-200RN

Manufacturer

Ampleon

Introduction

This is a high-performance LDMOS RF power transistor suitable for use in various RF power amplifier applications operating in the 700 MHz to 1 GHz frequency range.

Product Features and Performance

Designed for high power output up to 200W

Excellent gain of 20dB

Operates at a rated voltage of 65V

Suitable for use in the 700 MHz to 1 GHz frequency range

Capable of handling high current up to 4.2A

Product Advantages

Robust LDMOS technology for high reliability

Efficient power handling capabilities

Wide operating frequency range

Suitable for high-power RF amplifier designs

Key Technical Parameters

Output Power: 200W

Current (Test): 1.4A

Voltage (Rated): 65V

Gain: 20dB

Voltage (Test): 28V

Current Rating: 4.2A

Frequency Range: 700MHz to 1GHz

Quality and Safety Features

RoHS3 compliant

Packaged in SOT-502B surface mount package

Compatibility

Chassis mount package

Compatible with standard PCB mounting

Application Areas

RF power amplifiers

Broadcast transmitters

Wireless infrastructure equipment

Industrial, scientific, and medical (ISM) applications

Product Lifecycle

Currently in active production

Replacement or upgrade options available

Several Key Reasons to Choose This Product

Excellent power handling capabilities up to 200W

Wide operating frequency range from 700MHz to 1GHz

Robust LDMOS technology for high reliability

Efficient and cost-effective solution for high-power RF amplifier designs

Compatibility with standard PCB mounting