UMC3NT1G - onsemi

Manufacturer Part Number

UMC3NT1G

Manufacturer

onsemi

Introduction

Pre-biased bipolar junction transistor (BJT) array

Integrates one NPN and one PNP transistor

Product Features and Performance

Optimized for low-power applications

Designed for small-signal amplifier and switching applications

Provides stable biasing without the need for external resistors

Product Advantages

Reduces component count and board space

Simplifies circuit design

Improves reliability and consistency

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 50V

Collector Current (IC): 100mA

Power Dissipation: 150mW

DC Current Gain (hFE): 35 (min) @ 5mA, 10V

Quality and Safety Features

RoHS3 compliant

Manufactured in accordance with quality standards

Compatibility

Package: 5-TSSOP, SC-70-5, SOT-353

Mounting Type: Surface Mount

Application Areas

Small-signal amplifier circuits

Switch mode power supplies

Logic gates

Sensor and transducer interfaces

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacement or upgrade options are available if needed

Key Reasons to Choose This Product

Integrates both NPN and PNP transistors, reducing component count and simplifying circuit design

Provides stable biasing without the need for external resistors, improving reliability and consistency

Optimized for low-power applications, making it suitable for energy-efficient designs

Available in a compact surface-mount package, saving valuable board space