Manufacturer Part Number
TIP2955G
Manufacturer
onsemi
Introduction
High power PNP bipolar junction transistor
Product Features and Performance
Power rating up to 90W
High collector current up to 15A
High current gain up to 20 at 4A
High frequency transition up to 2.5MHz
Wide operating temperature range of -65°C to 150°C
Product Advantages
Robust and reliable performance
Suitable for high power switching and amplification applications
High power density design
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 60V
Collector Cutoff Current (Max): 700A
Collector-Emitter Saturation Voltage (Max): 3V @ 3.3A, 10A
Quality and Safety Features
ROHS3 compliant
TO-247-3 package for secure mounting and heat dissipation
Compatibility
Compatible with various high power electronic circuit designs
Application Areas
Power supplies
Motor controls
Switching regulators
Audio amplifiers
Industrial controls
Product Lifecycle
Current production model
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent power handling capability
High current and frequency performance
Robust and reliable operation
Compact and efficient TO-247-3 package
Suitable for a wide range of high power applications