Manufacturer Part Number
STD5406NT4G-VF01
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
Operates in extreme temperature environments (-55°C to 175°C)
Extremely low on-resistance (RDS(on) = 10 mΩ @ 30A, 10V)
High current capacity (Continuous Drain Current: 12.2A @ 25°C, 70A @ case temperature)
Fast switching speed
Low gate charge (Qg = 45 nC @ 10V)
Compact DPAK package
Product Advantages
Excellent thermal performance
Efficient power delivery
Reliable operation in harsh conditions
Compact size for space-constrained applications
Key Technical Parameters
Drain-Source Voltage (VDS): 40V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 10 mΩ @ 30A, 10V
Input Capacitance (Ciss): 2500 pF @ 32V
Power Dissipation: 3W (Ta), 100W (Tc)
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Automotive
Industrial
Consumer electronics
Power supplies
Motor drives
Product Lifecycle
This product is currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Exceptional thermal and electrical performance
Reliable operation in extreme environments
Compact size and high power density
Automotive-grade quality and safety
Broad compatibility across power electronics applications