SSVMUN5312DW1T2G - onsemi

Manufacturer Part Number

SSVMUN5312DW1T2G

Manufacturer

onsemi

Introduction

Dual matched bipolar junction transistor (BJT) array with internal pre-biased resistors

Product Features and Performance

1 NPN and 1 PNP pre-biased transistors in a single package

Optimized for analog and switching applications

Collector-emitter breakdown voltage: 50V

Collector current (max): 100mA

DC current gain (hFE): 60 (min)

Base resistor: 22kΩ

Emitter-base resistor: 22kΩ

Product Advantages

Space-saving compact package

Reduced component count in circuit design

Improved reliability and performance

Key Technical Parameters

Package: 6-TSSOP, SC-88, SOT-363

Power dissipation: 187mW

Collector-emitter breakdown voltage: 50V

Collector current (max): 100mA

Collector cutoff current (max): 500nA

Collector-emitter saturation voltage: 250mV

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount design

Application Areas

Analog and switching circuits

Biasing and load sharing

Current sources and sinks

Logic gates and level shifting

Product Lifecycle

Currently in production

Replacements or upgrades available

Several Key Reasons to Choose This Product

Compact and space-saving package

Matched NPN and PNP transistors for optimal circuit performance

Internal pre-biased resistors simplify circuit design

Robust electrical characteristics for wide range of applications

RoHS3 compliance for environmental responsibility