Manufacturer Part Number
SS9014ABU
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
TO-92-3 Package
Operating Temperature: 150°C (TJ)
Power Rating: 450 mW
Collector-Emitter Breakdown Voltage: 45 V
Collector Current: 100 mA
Collector Cutoff Current: 50 nA
Collector-Emitter Saturation Voltage: 300 mV @ 5 mA, 100 mA
DC Current Gain: 60 Min. @ 1 mA, 5 V
Transition Frequency: 270 MHz
Product Advantages
High power and voltage handling capability
Low saturation voltage for efficient operation
Wide operating temperature range
Key Technical Parameters
NPN Transistor Type
Through Hole Mounting
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-226-3, TO-92-3 (TO-226AA) Package
Application Areas
General-purpose amplifier and switching applications
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose This Product
High performance and reliability
Compact and space-saving package
Broad temperature and voltage operating range
Meets RoHS3 environmental compliance standards
SS9014CTAonsemiTRANS NPN 45V 0.1A TO92-3
SS9015-BSamsung Semiconductor
SS9015CFSC