SMBT3946DW1T1G - onsemi

Manufacturer Part Number

SMBT3946DW1T1G

Manufacturer

onsemi

Introduction

The SMBT3946DW1T1G is a bipolar junction transistor (BJT) array product from onsemi, designed for a variety of electronic applications.

Product Features and Performance

High transition frequency of 300MHz (NPN) and 250MHz (PNP)

Low collector-emitter saturation voltage of 300mV @ 5mA, 50mA and 400mV @ 5mA, 50mA

Minimum DC current gain (hFE) of 100 @ 10mA, 1V

Wide operating temperature range of -55°C to 150°C

Low power dissipation of 150mW

Product Advantages

Compact surface mount package

Excellent high-frequency performance

Low saturation voltage for efficient operation

Reliable and stable characteristics over temperature

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 40V

Current Collector (Ic) (Max): 200mA

Transistor Type: NPN, PNP

Quality and Safety Features

RoHS3 compliant

Suitable for Tape & Reel packaging

Compatibility

6-TSSOP, SC-88, SOT-363 package options

Application Areas

Analog and digital circuits

Switching and amplifier applications

Consumer electronics

Industrial control systems

Product Lifecycle

This product is an active and widely available component from onsemi.

Replacement or upgrade options may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

Excellent high-frequency performance for efficient circuit operation

Low saturation voltage for reduced power dissipation and improved efficiency

Reliable and stable characteristics over a wide temperature range

Compact surface mount package for space-constrained designs

RoHS3 compliance for use in environmentally conscious applications