Manufacturer Part Number
SGL160N60UFDTU
Manufacturer
onsemi
Introduction
High power IGBT transistor
Product Features and Performance
160A collector current rating
600V collector-emitter voltage rating
250W power rating
Fast switching speed with 95ns reverse recovery time
Low on-state voltage drop of 2.6V at 80A collector current
Wide operating temperature range of -55°C to 150°C
Product Advantages
Reliable and robust performance
Efficient power conversion
Suitable for high power applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (max): 160A
Collector Current Pulsed (max): 300A
On-State Voltage Drop: 2.6V @ 15V, 80A
Reverse Recovery Time: 95ns
Gate Charge: 345nC
Switching Energy: 2.5mJ (on), 1.76mJ (off)
Switching Times: 40ns (on), 90ns (off)
Quality and Safety Features
RoHS3 compliant
TO-264-3 package for reliable thermal management
Compatibility
Compatible with a wide range of power electronic systems and circuits
Application Areas
Inverters
Motor drives
Uninterruptible power supplies (UPS)
Power factor correction (PFC) circuits
Switch-mode power supplies (SMPS)
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High power handling capability up to 250W
Fast switching performance with low switching losses
Reliable and robust design for demanding applications
Wide operating temperature range for versatile use
RoHS3 compliance for environmental considerations