Manufacturer Part Number
SBAS20LT1G
Manufacturer
onsemi
Introduction
The SBAS20LT1G is a high-speed, high-voltage silicon rectifier diode in a small SOT-23-3 (TO-236) package.
Product Features and Performance
High-speed operation with a reverse recovery time (trr) of 50 ns
Low reverse leakage current of 100 nA at 150 V
Low forward voltage drop of 1.25 V at 200 mA
Operates over a wide temperature range of -55°C to 150°C
Small surface-mount SOT-23-3 (TO-236) package
Product Advantages
Compact size and surface-mount design for high-density PCB layouts
High-speed performance for efficient power conversion and switching applications
Low power losses and improved system efficiency
Wide operating temperature range for reliability in demanding environments
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 200 V
Current Average Rectified (Io): 200 mA
Capacitance @ Vr, F: 5 pF @ 0 V, 1 MHz
Reverse Recovery Time (trr): 50 ns
Quality and Safety Features
RoHS3 compliant
Meets industry safety and quality standards
Compatibility
The SBAS20LT1G is a direct replacement for older or discontinued rectifier diodes in similar package and performance specifications.
Application Areas
High-speed switching power supplies
Pulse circuits
Instrumentation and control systems
Industrial and automotive electronics
Product Lifecycle
The SBAS20LT1G is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Compact size and surface-mount design for high-density PCB layouts
High-speed performance for efficient power conversion and switching applications
Low power losses and improved system efficiency
Wide operating temperature range for reliability in demanding environments
RoHS3 compliance and industry-standard quality and safety features