Manufacturer Part Number
SB02-09C-TB-E
Manufacturer
onsemi
Introduction
Schottky Diode
Discrete Semiconductor Product
Single Rectifier Diode
Product Features and Performance
Low forward voltage drop of 700 mV at 200 mA
Fast reverse recovery time of 10 ns
Low reverse leakage current of 50 μA at 45 V
Low junction capacitance of 10 pF at 10 V, 1 MHz
Operating temperature range of -55°C to 125°C
Product Advantages
Improved efficiency in power conversion applications
Faster switching speeds compared to traditional silicon diodes
Reduced power losses and heat generation
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 90 V
Current Average Rectified (Io): 200 mA
Reverse Recovery Time (trr): 10 ns
Capacitance @ Vr, F: 10 pF @ 10 V, 1 MHz
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface Mount (SMD) package, TO-236-3, SC-59, SOT-23-3
Application Areas
Power supplies
DC-DC converters
Switch-mode power supplies
Freewheeling diodes
Polarity protection circuits
Product Lifecycle
Current production, no indication of discontinuation. Replacements or upgrades may be available.
Key Reasons to Choose This Product
Excellent performance characteristics, including low forward voltage drop, fast reverse recovery, and low leakage current
Efficient and reliable operation in power conversion applications
Compact and easy-to-integrate surface mount package
Compliant with RoHS3 environmental regulations
SB01W05SAYNO