PZTA96ST1G - onsemi

Manufacturer Part Number

PZTA96ST1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

Package: SOT-223 (TO-261)

Operating Temperature: 150°C (TJ)

Power Rating: 1.5 W

Collector-Emitter Breakdown Voltage: 450 V

Collector Current: 500 mA

Collector Cut-off Current: 100 nA (ICBO)

Collector-Emitter Saturation Voltage: 600 mV @ 2 mA, 20 mA

Transistor Type: PNP

DC Current Gain: 50 min. @ 10 mA, 10 V

Product Advantages

High voltage and power capability

Small surface mount package

Reliable performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 450 V

Collector Current: 500 mA

DC Current Gain: 50 min.

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with standard surface mount assembly processes

Application Areas

Power amplifiers

Motor controls

Switched-mode power supplies

Product Lifecycle

This product is an active and widely available device from onsemi.

Key Reasons to Choose This Product

High voltage and power handling capability

Small and efficient surface mount package

Reliable and consistent performance

Widespread availability and compatibility