PZTA42T1 - onsemi

Manufacturer Part Number

PZTA42T1

Manufacturer

onsemi

Introduction

Discrete Semiconductor Bipolar Junction Transistor (BJT) in SOT-223 (TO-261) package

Product Features and Performance

Operating temperature up to 150°C

Power rating up to 1.5W

Collector-Emitter Breakdown Voltage up to 300V

Collector Current up to 500mA

Low Collector-Emitter Saturation Voltage

High DC Current Gain up to 40

Transition Frequency up to 50MHz

Product Advantages

High voltage and power handling capability

Suitable for high-temperature applications

Small surface-mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 300V (max)

Collector Current: 500mA (max)

Collector Cutoff Current: 100nA (max)

Collector-Emitter Saturation Voltage: 500mV (max) @ 2mA, 20mA

DC Current Gain: 40 (min) @ 30mA, 10V

Transition Frequency: 50MHz

Quality and Safety Features

RoHS non-compliant

Compatibility

TO-261-4, TO-261AA package

Application Areas

High-voltage, high-power amplifier and switching circuits

Industrial control and automation

Telecommunications equipment

Automotive electronics

Product Lifecycle

This product is still in active production and not nearing discontinuation.

Replacements and upgrades may be available from the manufacturer or other suppliers.

Several Key Reasons to Choose This Product

High voltage and power handling capability for demanding applications

Suitable for high-temperature environments

Small surface-mount package for space-constrained designs

Reliable performance and long-term availability from a reputable manufacturer