PZT3906T1G - onsemi

Manufacturer Part Number

PZT3906T1G

Manufacturer

onsemi

Introduction

Bipolar Junction Transistor (BJT)

PNP transistor

Product Features and Performance

High frequency operation up to 250 MHz

Low collector-emitter saturation voltage

Wide operating temperature range from -55°C to 150°C

High power handling capability up to 1.5W

Product Advantages

Suitable for high-speed switching and amplification applications

Excellent thermal performance

Compact surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 40V

Collector Current (Max): 200mA

DC Current Gain (hFE): Minimum 100 @ 10mA, 1V

Transition Frequency: 250MHz

Quality and Safety Features

RoHS3 compliant

Reliable and robust design

Compatibility

Surface mount package (TO-261)

Compatible with standard PCB assembly processes

Application Areas

Switching circuits

Amplifier circuits

High-speed electronic devices

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High-frequency operation for fast switching and amplification

Wide temperature range for use in diverse environments

Compact surface mount package for space-constrained designs

Reliable and RoHS-compliant for long-term performance