Manufacturer Part Number
PZT2907AT3G
Manufacturer
onsemi
Introduction
PZT2907AT3G is a high-performance PNP bipolar junction transistor (BJT) from onsemi, designed for a wide range of electronic applications.
Product Features and Performance
Operates in the temperature range of -65°C to 150°C
Power rating of 1.5 W
Collector-Emitter Breakdown Voltage (VCEO) up to 60 V
Collector Current (IC) up to 600 mA
Low Collector-Emitter Saturation Voltage (VCE(sat)) of 1.6 V @ 50 mA, 500 mA
High DC Current Gain (hFE) of 100 min. @ 150 mA, 10 V
High Transition Frequency (fT) of 200 MHz
Product Advantages
Excellent performance characteristics
Wide operating temperature range
Suitable for a variety of electronic applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 60 V
Collector Current (IC): 600 mA
Collector-Emitter Saturation Voltage (VCE(sat)): 1.6 V @ 50 mA, 500 mA
DC Current Gain (hFE): 100 min. @ 150 mA, 10 V
Transition Frequency (fT): 200 MHz
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Available in SOT-223 (TO-261) package
Tape and reel packaging
Application Areas
Suitable for a wide range of electronic applications, including amplifiers, switches, and power control circuits
Product Lifecycle
Currently available and not nearing discontinuation
No known replacements or upgrades at this time
Key Reasons to Choose This Product
Excellent performance characteristics, including high power rating, high breakdown voltage, and high current handling capability
Wide operating temperature range, making it suitable for diverse applications
Proven reliability and quality from onsemi
Compatibility with common surface mount packaging and assembly processes