Manufacturer Part Number
PZT2222AT1G
Manufacturer
onsemi
Introduction
PZT2222AT1G is a high-performance NPN bipolar junction transistor (BJT) in a surface-mount SOT-223 package.
Product Features and Performance
Optimized for switching and amplifier applications
High current gain (hFE) of 100 minimum
High transition frequency (fT) of 300 MHz
Low collector-emitter saturation voltage (VCE(sat)) of 1V @ 50mA, 500mA
Wide operating temperature range of -55°C to 150°C
Low collector cutoff current (ICBO) of 10nA maximum
Product Advantages
Reliable and robust performance
Small footprint for space-constrained designs
Suitable for high-frequency and high-speed applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 40V
Collector Current (IC): 600mA
Power Dissipation: 1.5W
Quality and Safety Features
RoHS3 compliant
Meets industrial-grade quality standards
Compatibility
Suitable for a variety of electronic circuits and systems, including amplifiers, switches, and logic gates
Application Areas
General-purpose switching and amplification
High-frequency and high-speed electronic circuits
Industrial, consumer, and telecommunications applications
Product Lifecycle
Currently in production
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent performance characteristics, including high current gain, high transition frequency, and low saturation voltage
Compact surface-mount packaging for space-efficient designs
Wide operating temperature range for versatile applications
Reliable and robust construction for long-term reliability
RoHS3 compliance for environmentally conscious design