Manufacturer Part Number
PCP1103-TD-H
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product: Transistors - Bipolar (BJT) - Single
Product Features and Performance
Operating Temperature: 150°C (TJ)
Power Max: 3.5 W
Voltage Collector Emitter Breakdown (Max): 30 V
Current Collector (Ic) (Max): 1.5 A
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 375mV @ 15mA, 750mA
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency Transition: 450MHz
Product Advantages
Surface Mount Packaging
ROHS3 Compliant
Tape & Reel Packaging
Key Technical Parameters
Discrete Semiconductor Product: Transistors Bipolar (BJT) Single
Package / Case: TO-243AA
Supplier Device Package: PCP
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Mounting Type
Application Areas
Discrete Semiconductor Applications
Product Lifecycle
This product is an active and currently available part.
Several Key Reasons to Choose This Product
High power handling capability at 3.5W
High frequency operation up to 450MHz
High DC current gain (hFE) of 200 min.
Surface mount packaging for compact designs
ROHS3 compliant for environmentally friendly applications