NVTFS5820NLTWG - onsemi

Manufacturer Part Number

NVTFS5820NLTWG

Manufacturer

onsemi

Introduction

High-performance N-Channel MOSFET designed for automotive and industrial applications.

Product Features and Performance

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology

60V Drain-to-Source Voltage

Maximum Gate-to-Source Voltage of ±20V

On-resistance as low as 11.5mΩ

Continuous Drain Current of 11A at 25°C

Wide operating temperature range of -55°C to 175°C

High input capacitance of 1462pF

Maximum Power Dissipation of 3.2W (Ta) and 21W (Tc)

Product Advantages

Suitable for automotive and industrial applications

Excellent power efficiency and thermal performance

Robust design for reliable operation

Compact 8-WDFN (3.3x3.3) package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 11.5mΩ

Continuous Drain Current (Id): 11A

Input Capacitance (Ciss): 1462pF

Power Dissipation (Max): 3.2W (Ta), 21W (Tc)

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Compatible with a wide range of industrial and automotive applications

Application Areas

Power management circuits

Motor control

Automotive electronics

Industrial automation

Product Lifecycle

Current production status

Availability of replacement or upgrade options

Key Reasons to Choose This Product

High efficiency and low on-resistance for improved power performance

Wide operating temperature range for harsh environments

Compact package design for space-constrained applications

Robust and reliable design for automotive and industrial use

Compliance with relevant industry standards and regulations