Manufacturer Part Number
NVTFS027N10MCLTAG
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor suitable for automotive and industrial applications
Product Features and Performance
100V drain-to-source voltage
4A continuous drain current at 25°C ambient temperature
26mΩ maximum on-resistance at 7A, 10V
800pF maximum input capacitance at 50V
1W maximum power dissipation at 25°C ambient temperature
46W maximum power dissipation at 25°C case temperature
Product Advantages
Excellent thermal performance
Low on-resistance for high efficiency
Automotive-qualified to AEC-Q101 standard
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 7.4A (at 25°C ambient), 28A (at 25°C case)
On-Resistance (Rds(on)): 26mΩ (at 7A, 10V)
Input Capacitance (Ciss): 800pF (at 50V)
Power Dissipation: 3.1W (at 25°C ambient), 46W (at 25°C case)
Quality and Safety Features
RoHS3 compliant
Automotive-qualified to AEC-Q101 standard
Compatibility
Surface mount package (8-WDFN, 3.3x3.3mm)
Suitable for automotive and industrial applications
Application Areas
Automotive electronics (engine control, transmission control, etc.)
Industrial motor drives
Switch-mode power supplies
Lighting and LED drivers
Product Lifecycle
This product is an active and ongoing part of onsemi's portfolio
Replacements and upgrades may be available as technology advances
Key Reasons to Choose This Product
Excellent thermal and electrical performance for high-power applications
Automotive-qualified for reliability in harsh environments
Small, efficient surface-mount package
Part of onsemi's extensive portfolio of automotive and industrial semiconductors