Manufacturer Part Number
NVMFS5C680NLWFT1G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor suitable for automotive and industrial applications
Product Features and Performance
Operating temperature range: -55°C to 175°C
Drain-to-source voltage (Vdss): 60V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 27.5mΩ @ 7.5A, 10V
Continuous drain current (Id): 8.1A (Ta), 21A (Tc)
Input capacitance (Ciss): 330pF @ 25V
Power dissipation: 3.4W (Ta), 24W (Tc)
Gate charge (Qg): 5.8nC @ 10V
Product Advantages
Automotive-grade design and AEC-Q101 qualification
Low on-resistance for high efficiency
High current capability
Wide operating temperature range
Compact 5-DFN (5x6) (8-SOFL) package
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Gate threshold voltage (Vgs(th)): 2.2V @ 13A
Drive voltage range: 4.5V to 10V
Quality and Safety Features
RoHS3 compliant
Semiconductor-grade manufacturing process
Compatibility
Suitable for various automotive and industrial applications
Application Areas
Automotive electronics (e.g., power management, motor control)
Industrial equipment (e.g., power supplies, motor drives)
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Several Key Reasons to Choose This Product
Automotive-grade reliability and performance
Efficient power handling with low on-resistance
Wide operating temperature range for diverse applications
Compact and space-saving package design
Robust construction and quality manufacturing
