Manufacturer Part Number
NVMFS5C460NLWFT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
40 V Drain to Source Voltage (Vdss)
±20 V Maximum Gate-to-Source Voltage (Vgs)
5 mOhm Maximum On-Resistance (Rds(on)) at 35 A, 10 V
78 A Continuous Drain Current (Id) at 25°C
1300 pF Maximum Input Capacitance (Ciss) at 25 V
6 W Power Dissipation at 25°C (Ta), 50 W at Case Temperature (Tc)
2 V Maximum Gate Threshold Voltage (Vgs(th)) at 250 A
23 nC Maximum Gate Charge (Qg) at 10 V
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Suitable for automotive applications
Key Technical Parameters
N-Channel MOSFET Technology
40 V Drain to Source Voltage (Vdss)
±20 V Maximum Gate-to-Source Voltage (Vgs)
5 mOhm Maximum On-Resistance (Rds(on))
78 A Continuous Drain Current (Id)
1300 pF Maximum Input Capacitance (Ciss)
6 W Power Dissipation at 25°C (Ta), 50 W at Case Temperature (Tc)
2 V Maximum Gate Threshold Voltage (Vgs(th))
23 nC Maximum Gate Charge (Qg)
Quality and Safety Features
ROHS3 Compliant
Automotive-grade (AEC-Q101)
Compatibility
Surface Mount Mounting
5-DFN (5x6) (8-SOFL) Package
Tape & Reel Packaging
Application Areas
Automotive electronics
Power management
Industrial applications
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements or upgrades may be available in the future.
Key Reasons to Choose This Product
Low on-resistance for improved efficiency
High current handling capability
Suitable for automotive and industrial applications
Automotive-grade quality and safety features
Surface mount compatibility for easy integration
