Manufacturer Part Number
NVMD6N04R2G
Manufacturer
onsemi
Introduction
Dual N-Channel MOSFET power transistor in a compact 8-SOIC package for automotive and industrial applications.
Product Features and Performance
Dual N-Channel MOSFET configuration
40V Drain-to-Source Voltage (Vdss)
34mΩ maximum On-Resistance (Rds(on)) at 5.8A, 10V
6A maximum Continuous Drain Current (Id) at 25°C
900pF maximum Input Capacitance (Ciss) at 32V
3V maximum Gate-to-Source Threshold Voltage (Vgs(th)) at 250μA
30nC maximum Gate Charge (Qg) at 10V
Product Advantages
Compact 8-SOIC package for space-constrained designs
Automotive-qualified AEC-Q101 compliance
Optimized for efficiency in power conversion and control applications
Robust performance under high-current and high-voltage conditions
Key Technical Parameters
Power Dissipation: 1.29W
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 34mΩ @ 5.8A, 10V
Continuous Drain Current (Id): 4.6A @ 25°C
Input Capacitance (Ciss): 900pF @ 32V
Gate-to-Source Threshold Voltage (Vgs(th)): 3V @ 250μA
Gate Charge (Qg): 30nC @ 10V
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Compatibility
Suitable for a wide range of automotive and industrial applications requiring dual N-Channel MOSFET power transistors.
Application Areas
Power conversion and control circuits
Motor drives
Automotive electronics
Industrial automation and control systems
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Compact 8-SOIC package for space-constrained designs
Automotive-qualified AEC-Q101 compliance for reliable performance in harsh environments
Optimized for efficiency in power conversion and control applications
Robust performance under high-current and high-voltage conditions
Suitable for a wide range of automotive and industrial applications
