Manufacturer Part Number
NVC6S5A354PLZT1G
Manufacturer
onsemi
Introduction
This is a P-Channel MOSFET transistor from onsemi, designed for automotive and industrial applications.
Product Features and Performance
60V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
100mOhm Maximum On-Resistance (Rds(on)) at 2A, 10V
4A Continuous Drain Current (Id) at 25°C
600pF Maximum Input Capacitance (Ciss) at 20V
9W Maximum Power Dissipation at 25°C
-55°C to 175°C Operating Temperature Range
Product Advantages
AEC-Q101 qualified for automotive applications
Low on-resistance for efficient power switching
High voltage handling capability
Wide operating temperature range
Key Technical Parameters
MOSFET technology
P-channel FET type
SOT-23-6 / TSOT-23-6 package
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to automotive quality standards
Compatibility
Suitable for use in a wide range of automotive and industrial applications.
Application Areas
Power management
Motor control
Switching circuits
Automotive electronics
Product Lifecycle
This product is an active and in-production device. Replacements and upgrades may be available in the future.
Key Reasons to Choose
Proven reliability and performance for critical applications
Automotive-grade quality and AEC-Q101 qualification
Wide operating temperature range for harsh environments
Low on-resistance for efficient power switching
High voltage handling capability