Manufacturer Part Number
NTTFS6H850NTAG
Manufacturer
onsemi
Introduction
onsemi's NTTFS6H850NTAG is a high-performance N-channel MOSFET transistor designed for a wide range of power management and control applications.
Product Features and Performance
80V drain-to-source voltage (Vdss)
5mΩ maximum on-resistance (RDS(on)) at 10A and 10V
11A continuous drain current (ID) at 25°C ambient temperature (Ta)
68A continuous drain current (ID) at 25°C case temperature (Tc)
1140pF maximum input capacitance (Ciss) at 40V
2W power dissipation at 25°C ambient temperature (Ta)
107W power dissipation at 25°C case temperature (Tc)
-55°C to 175°C operating temperature range
Product Advantages
Excellent power handling capability
Low on-resistance for high efficiency
High current and power dissipation ratings
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (RDS(on)): 9.5mΩ @ 10A, 10V
Continuous Drain Current (ID): 11A (Ta), 68A (Tc)
Input Capacitance (Ciss): 1140pF @ 40V
Power Dissipation: 3.2W (Ta), 107W (Tc)
Gate Charge (Qg): 19nC @ 10V
Quality and Safety Features
RoHS3 compliant
MOSFET technology for high reliability and performance
Compatibility
Surface mount package (8-PowerWDFN) suitable for automated assembly
Application Areas
Power supplies
Motor drives
Inverters
Battery management systems
Industrial and consumer electronics
Product Lifecycle
This product is currently available and in active production.
Replacement or upgraded products may become available in the future.
Several Key Reasons to Choose This Product
High power handling capability with low on-resistance for efficient power conversion.
Wide operating temperature range suitable for demanding applications.
Compact surface mount package for space-constrained designs.
Reliable MOSFET technology and RoHS3 compliance for quality and safety.
Suitable for a variety of power management and control applications.
