Manufacturer Part Number
NTTFS4930NTAG
Manufacturer
onsemi
Introduction
This is a discrete semiconductor product, specifically a single transistor FET (Field-Effect Transistor), MOSFET (Metal-Oxide-Semiconductor FET) type.
Product Features and Performance
N-Channel MOSFET with 30V Drain-Source Voltage rating
Low on-resistance of 23mOhm @ 6A, 10V
Capable of handling up to 4.5A continuous drain current at 25°C ambient temperature
Supports up to 23A continuous drain current at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Input capacitance of 476pF @ 15V
Power dissipation of 790mW at 25°C ambient, and 20.2W at 25°C case temperature
Product Advantages
Excellent performance and efficiency due to low on-resistance
Wide temperature range for versatile applications
Compact 8-WDFN (3.3x3.3) surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 23mOhm @ 6A, 10V
Threshold Voltage (Vgs(th)): 2.2V @ 250μA
Drive Voltage: 4.5V (max Rds(on)), 10V (min Rds(on))
Gate Charge (Qg): 5.5nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering in Tape and Reel packaging
Compatibility
Surface mount package (8-WDFN 3.3x3.3)
Compatible with standard MOSFET drivers and control circuits
Application Areas
Suitable for a variety of power management and control applications, such as:
- Switch-mode power supplies
- Motor drives
- Inverters
- Power amplifiers
- General-purpose power switching
Product Lifecycle
This product is an active, in-production part from onsemi.
Replacements or upgrades may be available as technology evolves.
Several Key Reasons to Choose This Product
Excellent performance-to-size ratio due to low on-resistance and compact package
Wide temperature range for versatile applications
Reliable and efficient power switching capabilities
RoHS3 compliance for environmentally-friendly use
Availability in standard Tape and Reel packaging for easy integration
NTTFS4930NTAGFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 7