NTS2101PT1 - onsemi

Manufacturer Part Number

NTS2101PT1

Manufacturer

onsemi

Introduction

P-channel enhancement mode MOSFET transistor

Suitable for power switching and amplifier applications

Product Features and Performance

Low on-resistance for low power loss

High current handling capability

Fast switching speed

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency

Reliable performance

Compact surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 8 V

Vgs (Max): ±8 V

On-Resistance (Rds On): 100 mΩ @ 1 A, 4.5 V

Continuous Drain Current (Id): 1.4 A @ 25°C

Input Capacitance (Ciss): 640 pF @ 8 V

Power Dissipation (Max): 290 mW

Quality and Safety Features

RoHS non-compliant

Suitable for industrial and consumer applications

Compatibility

Can be used as a replacement or upgrade for similar P-channel MOSFET transistors

Application Areas

Power switching circuits

Amplifier circuits

Motor control

Battery-powered devices

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacement or upgraded models may be available in the future

Several Key Reasons to Choose This Product

Excellent power efficiency and low power loss

High current handling capability

Wide operating temperature range

Reliable performance in industrial and consumer applications

Compact surface mount package for space-constrained designs