Manufacturer Part Number
NTR4502PT1G
Manufacturer
onsemi
Introduction
This product is a P-channel MOSFET transistor that is part of onsemi's discrete semiconductor product line.
Product Features and Performance
P-channel MOSFET transistor
Operates in the temperature range of -55°C to 150°C
Drain-to-Source voltage (Vdss) of 30V
Maximum Gate-to-Source voltage (Vgs) of ±20V
On-state resistance (Rds(on)) of 200mΩ @ 1.95A, 10V
Continuous Drain Current (Id) of 1.13A @ 25°C
Input Capacitance (Ciss) of 200pF @ 15V
Maximum Power Dissipation of 400mW
Product Advantages
Compact SOT-23-3 (TO-236) surface mount package
Suitable for a wide range of temperature applications
Low on-state resistance for efficient power switching
Supports high drain-to-source voltage
Tight control of key parameters
Key Technical Parameters
MOSFET technology
P-channel FET type
Threshold voltage (Vgs(th)) of 3V @ 250μA
Gate drive voltage range of 4.5V to 10V
Maximum gate charge (Qg) of 10nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and commercial applications
Compatibility
Can be used as a replacement or upgrade for similar P-channel MOSFET transistors in various electronic circuits and systems
Application Areas
Power management circuits
Switching circuits
Driver circuits
General-purpose electronic applications
Product Lifecycle
Currently available and not nearing discontinuation
Replacements and upgrades may be available in the future as technology advances
Key Reasons to Choose This Product
Reliable and efficient power switching performance
Wide operating temperature range for diverse applications
Compact surface mount package for space-constrained designs
Tight control of key parameters for consistent performance
RoHS compliance for use in environmentally-conscious applications