Manufacturer Part Number
NTMFS4985NFT1G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET optimized for power switching applications
Product Features and Performance
Extremely low on-resistance (RDS(on) of 3.4 mΩ) for high efficiency
High current capability (65A continuous drain current)
Fast switching speed with low gate charge (Qg = 30.5 nC)
Wide operating temperature range (-55°C to 150°C)
Compact 5-pin DFN (5x6) package
Product Advantages
Excellent thermal performance for high power density
Optimized for high-frequency, high-efficiency power conversion
Reliable and robust design for demanding applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 3.4 mΩ @ 30A, 10V
Continuous Drain Current (ID): 17.5A (Ta), 65A (Tc)
Input Capacitance (Ciss): 2100 pF @ 15V
Power Dissipation: 1.63W (Ta), 22.73W (Tc)
Quality and Safety Features
RoHS3 compliant
Stringent quality control and reliability testing
Compatibility
Drop-in replacement for a wide range of power switching applications
Application Areas
High-efficiency power supplies
Motor drives
Voltage regulators
Inverters and converters
Product Lifecycle
Currently in active production
No plans for discontinuation
Several Key Reasons to Choose This Product
Exceptional efficiency and power density
Robust and reliable performance in demanding applications
Compact and space-saving package
Proven technology from a trusted manufacturer