Manufacturer Part Number
NTMFS4939NT1G
Manufacturer
onsemi
Introduction
The NTMFS4939NT1G is a high-performance N-channel MOSFET transistor from onsemi's discrete semiconductor product line.
Product Features and Performance
30V drain-to-source voltage
5mΩ maximum on-resistance at 30A, 10V
3A continuous drain current at 25°C ambient
53A continuous drain current at 25°C case temperature
1954pF maximum input capacitance at 15V
5nC maximum gate charge at 10V
Operates in the temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for improved efficiency
High current capability
Compact 5-DFN (5x6) (8-SOFL) package
RoHS3 compliant
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.5mΩ @ 30A, 10V
Continuous Drain Current (Id): 9.3A (Ta), 53A (Tc)
Input Capacitance (Ciss): 1954pF @ 15V
Power Dissipation: 920mW (Ta), 30W (Tc)
Quality and Safety Features
RoHS3 compliant
Operates in the temperature range of -55°C to 150°C
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and applications that require a high-performance, low on-resistance N-channel transistor.
Application Areas
Power supplies
Motor drives
Audio amplifiers
Industrial and consumer electronics
Product Lifecycle
The NTMFS4939NT1G is an active product and not nearing discontinuation. There are no known immediate replacement or upgrade models.
Key Reasons to Choose This Product
Excellent efficiency due to low on-resistance
High current capability for demanding applications
Compact package size for space-constrained designs
Wide operating temperature range
RoHS3 compliance for use in environmentally-conscious applications
