NTK3142PT1G - onsemi

Manufacturer Part Number

NTK3142PT1G

Manufacturer

onsemi

Introduction

The NTK3142PT1G is a P-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed for a variety of applications, including power management, switching circuits, and amplifier circuits.

Product Features and Performance

20V Drain-to-Source Voltage (Vdss)

±8V Gate-to-Source Voltage (Vgs)

4Ω Maximum On-Resistance (Rds(on)) at 260mA, 4.5V

215mA Continuous Drain Current (Id) at 25°C

3pF Maximum Input Capacitance (Ciss) at 10V

280mW Maximum Power Dissipation at 25°C

Product Advantages

Low on-resistance for improved efficiency

High drain-to-source voltage rating for versatile applications

Small package size for compact design

Key Technical Parameters

MOSFET Technology

P-Channel FET Type

3V Maximum Gate-to-Source Threshold Voltage (Vgs(th)) at 250µA

8V Minimum Drive Voltage for Maximum Rds(on)

5V Maximum Drive Voltage for Minimum Rds(on)

Quality and Safety Features

Operates within a wide temperature range of -55°C to 150°C

Complies with relevant safety and quality standards

Compatibility

Surface mount package (SOT-723)

Compatible with standard MOSFET circuit design and fabrication processes

Application Areas

Power management circuits

Switching circuits

Amplifier circuits

General-purpose electronic applications

Product Lifecycle

Current product offering from onsemi

No information available on discontinuation or replacement plans

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance and high voltage rating

Compact surface mount package for space-constrained designs

Wide operating temperature range for versatile applications

Reliable and stable performance backed by onsemi's reputation