NTF3055L175T1G - onsemi

Manufacturer Part Number

NTF3055L175T1G

Manufacturer

onsemi

Introduction

N-channel enhancement mode power MOSFET in a SOT-223 (TO-261) package

Product Features and Performance

Designed for high-frequency switching applications

Low on-resistance for improved efficiency

Fast switching speed

Low gate charge for high-speed operation

Low gate-source threshold voltage

Product Advantages

High power density

Reduced power consumption

Improved thermal management

Reliable and robust performance

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±15V

On-Resistance (Rds(on)): 175mΩ @ 1A, 5V

Continuous Drain Current (Id): 2A @ 25°C

Input Capacitance (Ciss): 270pF @ 25V

Power Dissipation (Pd): 1.3W @ 25°C

Quality and Safety Features

Compliant with RoHS and REACH regulations

ESD protection

Moisture Sensitivity Level (MSL): 1

Compatibility

Compatible with various high-frequency, high-power switching applications

Application Areas

Power supplies

Motor drives

Lighting applications

Industrial and consumer electronics

Product Lifecycle

Current product, no discontinuation or replacement planned

Several Key Reasons to Choose This Product

Excellent performance in high-frequency, high-power switching applications

Efficient power management due to low on-resistance and fast switching speeds

Reliable and robust design for demanding operating environments

Compact and space-saving SOT-223 (TO-261) package

Compliance with industry safety and environmental standards