Manufacturer Part Number
NTD80N02T4G
Manufacturer
onsemi
Introduction
The NTD80N02T4G is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor in a DPAK package.
Product Features and Performance
N-Channel MOSFET transistor
DPAK (TO-252-3) package
Drain-to-Source Voltage (Vdss) of 24V
Maximum Drain Current (Id) of 80A at 25°C
Low On-Resistance (Rds(on)) of 5.8mΩ at 80A, 10V
Input Capacitance (Ciss) of 2600pF at 20V
Power Dissipation (Pd) of 75W at 25°C
Product Advantages
High current handling capability
Low on-resistance for efficient power conversion
Compact DPAK package for space-constrained applications
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 24V
Maximum Gate-to-Source Voltage (Vgs): ±20V
Drain Current (Id) at 25°C: 80A
On-Resistance (Rds(on)): 5.8mΩ at 80A, 10V
Input Capacitance (Ciss): 2600pF at 20V
Power Dissipation (Pd): 75W at 25°C
Quality and Safety Features
Robust MOSFET technology
Compliant with industry standards
RoHS compliant
Compatibility
Compatible with a wide range of electronic systems and circuits
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Amplifiers
Product Lifecycle
The NTD80N02T4G is an active product and is not nearing discontinuation.
Replacements and upgrades may be available from the manufacturer.
Key Reasons to Choose This Product
High current handling capability for efficient power conversion
Low on-resistance for improved energy efficiency
Compact DPAK package for space-constrained applications
Wide operating temperature range for versatile use
Robust MOSFET technology and industry compliance for reliable performance
NTD85N02-1GAMI Semiconductor/onsemi