Manufacturer Part Number
NTD5802NT4G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor
Suitable for a wide range of power conversion and switching applications
Product Features and Performance
Low on-resistance for high efficiency
High current capability up to 101A
High power dissipation up to 93.75W
Wide operating temperature range of -55°C to 175°C
Fast switching speed
Low gate charge for efficient switching
Product Advantages
Excellent thermal management
Efficient power conversion
Reliable operation in demanding applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
On-resistance (Rds(on)): 4.4mΩ @ 50A, 10V
Continuous Drain Current (Id): 16.4A (Ta), 101A (Tc)
Input Capacitance (Ciss): 5025pF @ 25V
Gate Charge (Qg): 100nC @ 10V
Quality and Safety Features
RoHS3 compliant
Robust DPAK package
Compatibility
Suitable for use in a variety of power conversion and switching applications
Application Areas
Switch-mode power supplies
Motor drives
Electric vehicle systems
Industrial automation and control
Telecommunications equipment
Product Lifecycle
Current production
Ongoing availability and support
Several Key Reasons to Choose This Product
High efficiency and low power loss due to low on-resistance
Excellent thermal management capabilities
Reliable operation in demanding environments
Versatile application range
Proven onsemi quality and reliability