Manufacturer Part Number
NTD50N03RT4G
Manufacturer
onsemi
Introduction
The NTD50N03RT4G is a N-Channel enhancement mode power MOSFET transistor from onsemi, designed for use in power switching applications.
Product Features and Performance
N-Channel MOSFET with low on-resistance
Drain-to-Source voltage up to 25V
Continuous drain current up to 7.8A (at 25°C ambient) and 45A (at 25°C case temperature)
Low gate charge and fast switching for efficient power conversion
Operates over a wide temperature range of -55°C to 175°C
Product Advantages
Excellent on-state and switching performance
Compact DPAK surface-mount package
Suitable for high-frequency, high-efficiency power conversion applications
Robust design for reliable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 12mΩ @ 30A, 11.5V
Drain Current (Id): 7.8A (Ta), 45A (Tc)
Input Capacitance (Ciss): 750pF @ 12V
Power Dissipation: 1.5W (Ta), 50W (Tc)
Quality and Safety Features
Rigorously tested for quality and reliability
Designed and manufactured to meet industry safety standards
Compatibility
Surface mount DPAK package compatible with standard SMT assembly processes
Suitable for a wide range of power supply, motor control, and other power switching applications
Application Areas
Switch-mode power supplies
Motor drives and controls
Lighting ballasts
Automotive electronics
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation
Replacement or upgrade options may be available from onsemi as technology evolves
Key Reasons to Choose This Product
High efficiency and performance in a compact package
Robust design and wide operating temperature range
Proven reliability and quality from a trusted manufacturer
Compatibility with common power electronics applications and assembly processes