Manufacturer Part Number
NTD4808NT4G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and fast switching capabilities, suitable for a wide range of power management and control applications.
Product Features and Performance
Extremely low on-resistance (RDS(on) of 8 mΩ) for high efficiency
Fast switching speed and low gate charge for improved energy efficiency
Wide operating temperature range of -55°C to 175°C
High current handling capability up to 63A
Product Advantages
Efficient power conversion and control
Reliable and robust performance in demanding applications
Compact and space-saving DPAK package
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30 V
Gate-to-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 10A (Ta), 63A (Tc)
Input Capacitance (Ciss): 1538 pF @ 12 V
Power Dissipation (PD): 1.4W (Ta), 54.6W (Tc)
Quality and Safety Features
Designed and manufactured to rigorous quality standards
Robust construction and protection against thermal and electrical stress
Compatibility
Suitable for a wide range of power management and control applications, including motor drives, power supplies, and industrial electronics
Application Areas
Power conversion and control
Motor drives
Power supplies
Industrial electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement and upgrade options available from onsemi
Key Reasons to Choose This Product
Exceptional efficiency and performance with ultra-low on-resistance
Reliable and robust operation in demanding environments
Compact and space-saving design
Extensive application versatility
Backed by onsemi's expertise and quality standards
