Manufacturer Part Number
NTD40N03RT4G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and fast switching speed, suitable for a wide range of power management and switching applications.
Product Features and Performance
Extremely low on-resistance (RDS(ON) = 16.5 mΩ @ 10 A, 10 V)
High current capability (ID = 7.8 A at Ta, 32 A at Tc)
Fast switching speed
Wide operating temperature range (-55°C to 175°C)
Low gate charge (Qg = 5.78 nC @ 4.5 V)
Low input capacitance (Ciss = 584 pF @ 20 V)
Product Advantages
Efficient power conversion and regulation
Reduced power dissipation and heat generation
Compact and space-saving design
Reliable operation in harsh environments
Key Technical Parameters
Drain-Source Voltage (VDS): 25 V
Gate-Source Voltage (VGS): ±20 V
Threshold Voltage (VGS(th)): 2 V @ 250 A
Drive Voltage (VGS): 4.5 V (max RDS(ON)), 10 V (min RDS(ON))
Quality and Safety Features
Robust MOSFET design for high reliability
ESD protection
Compliance with relevant safety standards
Compatibility
Surface mount package (TO-252-3, DPak)
Compatible with common power electronic circuits and systems
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Industrial and consumer electronics
Product Lifecycle
The NTD40N03RT4G is an active product with no plans for discontinuation.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and long-term availability
Compatibility with a wide range of power electronics applications
Ease of integration and design flexibility
Compliance with relevant safety and quality standards