Manufacturer Part Number
NTD3055L170T4G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor
Designed for power management and switching applications
Product Features and Performance
Wide operating temperature range: -55°C to 175°C
Low on-resistance: 170 mΩ @ 4.5 A, 5 V
High drain current: 9 A @ 25°C
Low input capacitance: 275 pF @ 25 V
Low power dissipation: 1.5 W @ 25°C, 28.5 W @ 175°C
Product Advantages
Excellent thermal management
High power density
Reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60 V
Gate-to-Source Voltage (Vgs): ±15 V
Threshold Voltage (Vgs(th)): 2 V @ 250 A
Input Capacitance (Ciss): 275 pF @ 25 V
Gate Charge (Qg): 10 nC @ 5 V
Quality and Safety Features
RoHS3 compliant
DPAK package for enhanced thermal performance
Surface mount design
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement and upgrade options may be available
Key Reasons to Choose This Product
High efficiency and power density
Reliable and robust performance
Wide operating temperature range
Ease of integration and compatibility
RoHS compliance for environmental safety