NTD20N06L - onsemi

Manufacturer Part Number

NTD20N06L

Manufacturer

onsemi

Introduction

High-performance power MOSFET transistor for various power switching applications

Product Features and Performance

High current handling capability up to 20A

Low on-resistance (RDS(on)) of 48 mΩ

Wide operating temperature range of -55°C to 175°C

High power dissipation of 1.36W (Ta) and 60W (Tj)

Low input capacitance of 990 pF

N-channel MOSFET transistor

Product Advantages

Excellent power efficiency due to low RDS(on)

Reliable operation in high-temperature environments

Versatile in a wide range of power switching applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Continuous Drain Current (ID): 20A (at 25°C)

On-Resistance (RDS(on)): 48 mΩ (at 10A, 5V)

Gate Threshold Voltage (Vgs(th)): 2V (at 250A)

Input Capacitance (Ciss): 990 pF (at 25V)

Quality and Safety Features

RoHS non-compliant

DPAK surface mount package

Suitable for high-temperature and high-power applications

Compatibility

Compatible with various power supply and control circuits

Application Areas

Power supplies

Motor drives

Switching regulators

Telecommunication equipment

Industrial automation

Product Lifecycle

Currently available

No known plans for discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

High current handling capability up to 20A

Excellent power efficiency due to low RDS(on)

Wide operating temperature range of -55°C to 175°C

Reliable operation in high-temperature environments

Versatile in a wide range of power switching applications