NSPM2051MUT5G - onsemi

Manufacturer Part Number

NSPM2051MUT5G

Manufacturer

onsemi

Introduction

Transient Voltage Suppressor Diode for ESD protection

Product Features and Performance

Unidirectional channel

Breakdown Voltage: 5.1V min

Clamping Voltage: 10.5V max at 100A peak pulse current

Low Capacitance: 380pF @ 1MHz

High-temperature operation: -65°C to 150°C

Product Advantages

Compact 2-UDFN package

High ESD immunity

Fast response time to transient events

Key Technical Parameters

Voltage - Reverse Standoff: 5V max

Voltage - Breakdown (Min): 5.1V

Voltage - Clamping (Max) @ Ipp: 10.5V

Current - Peak Pulse: 100A (8/20µs)

Capacitance @ Frequency: 380pF @ 1MHz

Quality and Safety Features

Robust against repeated ESD strikes

High reliability under surge conditions

Compatibility

Surface Mount compatible with 2-UDFN footprint

Lead-free and RoHS compliant

Application Areas

General Purpose ESD protection for various electronic devices

Product Lifecycle

Last Time Buy status - nearing discontinuation, contact manufacturer for replacements or upgrades

Key Reasons to Choose This Product

Designed for high-temperature environments

Low capacitance ideal for high-speed data lines

Streamlined 2-UDP package for space-sensitive applications

Lead-free for environmentally conscious manufacturing

Part of a respected series of TVS diodes from onsemi