Manufacturer Part Number
NSBC124EPDXV6T1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Products
Transistors Bipolar (BJT) Arrays, Pre-Biased
Product Features and Performance
RoHS3 Compliant
SOT-563 package
Power Max: 500mW
Voltage Collector Emitter Breakdown (Max): 50V
Current Collector (Ic) (Max): 100mA
Current Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
Transistor Type: 1 NPN, 1 PNP Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor Base (R1): 22kOhms
Resistor Emitter Base (R2): 22kOhms
Product Advantages
Compact SOT-563 package
Pre-biased transistor pair for easy circuit design
High breakdown voltage and low saturation voltage
Key Technical Parameters
Power Rating: 500mW
Collector-Emitter Breakdown Voltage: 50V
Collector Current: 100mA
Collector Cutoff Current: 500nA
Transistor Configuration: Dual (1 NPN, 1 PNP), Pre-Biased
DC Current Gain: 60 (min)
Resistor Values: 22kOhms (Base), 22kOhms (Emitter-Base)
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount (SMD) package
Application Areas
General-purpose amplifier and switch applications
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Compact, space-saving SOT-563 package
Pre-biased transistor pair for easy circuit design
High breakdown voltage and low saturation voltage for reliable operation
Suitable for a variety of general-purpose amplifier and switch applications
RoHS3 compliant for environmental safety