Manufacturer Part Number
NRVBB20H100CTT4G
Manufacturer
onsemi
Introduction
High-performance, surface-mount, silicon Schottky barrier diode array in a DPAK package.
Product Features and Performance
Schottky barrier technology for fast switching and low forward voltage drop
Automotive-qualified, AEC-Q101 compliant
Low reverse leakage current
High average rectified current per diode
Fast recovery time
Product Advantages
Compact surface-mount DPAK package
Suitable for high-frequency, high-current switching applications
Improved energy efficiency
Reliable performance in automotive environments
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 100 V
Current Average Rectified (Io) (per Diode): 10 A
Current Reverse Leakage @ Vr: 4.5 A @ 100 V
Voltage Forward (Vf) (Max) @ If: 770 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature Junction: 175°C
Quality and Safety Features
RoHS3 compliant
Automotive-qualified, AEC-Q101 compliant
Compatibility
Suitable for high-frequency, high-current switching applications in automotive and industrial power electronics
Application Areas
Automotive electronics
Industrial power supplies
Power factor correction circuits
Freewheeling diodes
Switched-mode power supplies
Product Lifecycle
Current production part, no plans for discontinuation
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Compact surface-mount DPAK package for space-constrained designs
Automotive-qualified and AEC-Q101 compliant for reliable performance in harsh environments
High average rectified current and fast recovery time for improved energy efficiency
Low forward voltage drop and reverse leakage current for enhanced system performance
Suitable for a wide range of high-frequency, high-current switching applications in automotive and industrial power electronics