NRVB5100MFST1G - onsemi

Manufacturer Part Number

NRVB5100MFST1G

Manufacturer

onsemi

Introduction

High-performance Schottky diode in a compact, thermally-efficient PowerTDFN package.

Product Features and Performance

Fast recovery time (≤ 500 ns)

Low forward voltage (980 mV @ 5 A)

High reverse voltage (100 V)

High average rectified current (5 A)

Wide operating temperature range (-55°C to 175°C)

Product Advantages

Excellent thermal performance due to PowerTDFN package

Compact and space-saving design

Suitable for high-frequency, high-power applications

Key Technical Parameters

Voltage DC Reverse (Vr) (Max): 100 V

Current Average Rectified (Io): 5 A

Current Reverse Leakage @ Vr: 10 A @ 100 V

Voltage Forward (Vf) (Max) @ If: 980 mV @ 5 A

Technology: Schottky

Speed: Fast Recovery ≤ 500 ns, > 200 mA (Io)

Operating Temperature Junction: -55°C to 175°C

Quality and Safety Features

RoHS3 compliant

Reliable performance and long lifespan

Compatibility

Surface mount design

Compatible with standard SMT assembly processes

Application Areas

Switching power supplies

Freewheeling diodes

Reverse polarity protection

Power factor correction circuits

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacements and upgrades may be available in the future.

Several Key Reasons to Choose This Product

Excellent thermal performance and compact design for space-constrained applications

Wide operating temperature range and high reliability

Fast recovery time and low forward voltage for high-frequency, high-power applications

RoHS3 compliance for environmentally-friendly use