Manufacturer Part Number
NDS9410A
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Part of the onsemi NDS941 series
Product Features and Performance
Drain to source voltage (Vdss) up to 30V
Gate-source voltage (Vgs) up to ±20V
On-state resistance (Rds(on)) as low as 28mΩ @ 7.3A, 10V
Continuous drain current (Id) up to 7.3A at 25°C
Input capacitance (Ciss) of 830pF @ 15V
Power dissipation up to 2.5W at 25°C
Product Advantages
Low on-state resistance for efficient power switching
High current handling capability
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
MOSFET technology
N-channel FET type
Threshold voltage (Vgs(th)) up to 3V @ 250μA
Gate drive voltage of 4.5V (max Rds(on)), 10V (min Rds(on))
Gate charge (Qg) up to 22nC @ 10V
Quality and Safety Features
Designed and manufactured to high quality standards
Robust construction for reliable operation
Compatibility
Surface mount 8-SOIC package
Compatible with common PCB assembly processes
Application Areas
Power switching and control applications
Motor drives
Inverters and converters
General purpose power management
Product Lifecycle
Currently in active production
No plans for discontinuation
Replacement or upgraded parts may be available in the future
Several Key Reasons to Choose This Product
Low on-state resistance for efficient power conversion
High current handling capability for demanding applications
Wide operating temperature range for robust performance
Reliable construction and quality manufacturing
Compatibility with common PCB assembly processes
Availability of the product and potential for future replacements