Manufacturer Part Number
NDS9400A
Manufacturer
onsemi
Introduction
High-performance P-channel enhancement-mode MOSFET
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
High drain-to-source voltage: 30V
Low on-resistance: 130mΩ @ 1A, 10V
High continuous drain current: 3.4A @ 25°C
Low input capacitance: 350pF @ 10V
Low gate charge: 25nC @ 10V
Product Advantages
Excellent thermal performance
Reliable operation across wide temperature range
Efficient power conversion
Compact surface-mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 130mΩ @ 1A, 10V
Continuous Drain Current (Id): 3.4A @ 25°C
Input Capacitance (Ciss): 350pF @ 10V
Gate Charge (Qg): 25nC @ 10V
Power Dissipation (Pd): 2.5W @ 25°C
Quality and Safety Features
Robust metal-oxide-semiconductor field-effect transistor (MOSFET) technology
ESD protection
Compatibility
Compatible with a wide range of electronic systems and applications
Application Areas
Suitable for use in power management, switching, and control circuits
Applicable in various consumer, industrial, and automotive electronics
Product Lifecycle
Current product offering, no indication of discontinuation
Replacements and upgrades may be available as technology evolves
Several Key Reasons to Choose This Product
Excellent thermal performance and wide operating temperature range
Low on-resistance for efficient power conversion
High continuous drain current capability
Compact surface-mount package for space-constrained designs
Reliable operation and ESD protection for robust performance
NDS9405-NLVBSEMI